2SB1121

No. 1787-2/4

Continued from preceding page.

Parameter

Symbol

Conditions

Ratings

Unit

Collector Dissipation

PC

500

mW

When mounted on ceramic substrate (250mm

1.3

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

-55 to +150

°C

Electrical Characteristics at Ta

= 25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Collector Cutoff Current

ICBO

VCB=-20V, IE=0A

-0.1

μA

Emitter Cutoff Current

IEBO

VEB=-4V, IC=0A

-0.1

μA

DC Current Gain

hFE1

VCE=-2V, IC=-100mA

140*

400*

hFE2

VCE=-2V, IC=-1.5A

65

Gain-Bandwidth Product

fT

VCE=-10V, IC=-50mA

150

MHz

Output Capacitance

Cob

VCB=-10V, f=1MHz

32

pF

Collector to Emitter Saturation Voltage

VCE(sat)

IC=-1.5A, IB=-75mA

-0.35

-0.6

V

Base to Emitter Saturation Voltage

VBE(sat)

IC=-1.5A, IB=-75mA

-0.85

-1.2

V

Collector to Base Breakdown Voltage

V(BR)CBO

IC=-10μA, IE=0A

-30

V

Collector to Emitter Breakdown Voltage

V(BR)CEO

IC=-1mA, RBE=∞

-25

V

Emitter to Base Breakdown Voltage

V(BR)EBO

IE=-10μA, IC=0A

-6

V

Turn-ON Time

ton

See specified Test Circuit

60

ns

Storage Time

tstg

350

ns

Fall Time

tf

25

ns

*: The 2SB1121 is classified by 100mA hFE as follows:

Rank

S

T

hFE

140 to 280

200 to 400

Switching Time Test Circuit

Ordering Information

Device

Package

Shipping

Memo

2SB1121S-TD-E

2SB1121T-TD-E

PCP

1,000pcs./reel

Pb-Free

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.