IRF7105TRPbF-1

2

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October 16, 2014

max. junction temperature.

Notes:

Drain-to-Source Breakdown Voltage

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Forward Transconductance

Drain-to-Source Leakage Current

Total GateCharge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Parameter

Min. Typ. Max. Units

Conditions

N-Ch 25

—

—

P-Ch -25

—

—

N-Ch — 0.030 —

P-Ch — -0.015 —

— 0.083 0.10

— 0.14 0.16

— 0.16 0.25

— 0.30 0.40

N-Ch 1.0

—

3.0

P-Ch -1.0 — -3.0

N-Ch —

4.3

—

P-Ch —

3.1

—

N-Ch —

—

2.0

P-Ch —

— -2.0

N-Ch —

—

25

P-Ch —

—

-25

Gate-to-Source Forward Leakage

N-P ––

— ±100

N-Ch —

9.4

27

P-Ch —

10

25

N-Ch —

1.7

—

P-Ch —

1.9

—

N-Ch —

3.1

—

P-Ch —

2.8

—

N-Ch —

7.0

20

P-Ch —

12

40

N-Ch —

9.0

20

P-Ch —

13

40

N-Ch —

45

90

P-Ch —

45

90

N-Ch —

25

50

P-Ch —

37

50

Internal Drain Inductace

N-P

—

4.0

—

Between lead , 6mm (0.25in.)from

Internal Source Inductance

N-P

—

6.0

—

package and center of die contact

N-Ch —

330

—

P-Ch —

290

—

N-Ch —

250

—

P-Ch —

210

—

N-Ch —

61

—

P-Ch —

67

—

Parameter

Min. Typ. Max. Units

Conditions

N-Ch —

—

2.0

P-Ch —

— -2.0

N-Ch —

—

14

P-Ch —

— -9.2

N-Ch —

—

1.2

P-Ch —

— -1.2

N-Ch —

36

54

P-Ch —

69

100

N-Ch —

41

75

P-Ch —

90

180

Forward Turn-On Time

N-P

Source-Drain Ratings and Characteristics

V

V/°C

Ω

V

S

µA

nC

ns

nH

pF

N-Channel

ƒ

P-Channel

N-Channel

ƒ

P-Channel

N-Channel

P-Channel

N-Ch

P-Ch

Continuous Source Current (Body Diode)

Pulsed Source Current (Body Diode) 

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

A

V

ns

nC

N-Channel

P-Channel

ƒ