CMLT2207_15 datasheet(1/3 Pages) CENTRAL

Part #	CMLT2207

Description	COMPLEMENTARY TRANSISTOR

PDF	3 Pages

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Manufacturer	CENTRAL [Central Semiconductor Corp]

Direct Link	http://www.centralsemi.com

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CMLT2207G

SURFACE MOUNT SILICON

DUAL, COMPLEMENTARY

TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLT2207G

consists of one isolated 2N2222A NPN transistor and

one complementary isolated 2N2907A PNP transistor,

manufactured by the epitaxial planar process and

epoxy molded in an SOT-563 surface mount package.

This device has been designed for small signal general

purpose amplifier and switching applications.

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

NPN (Q1)

PNP (Q2)

UNITS

Collector-Base Voltage

VCBO

75

60

V

Collector-Emitter Voltage

VCEO

40

60

V

Emitter-Base Voltage

VEBO

6.0

5.0

V

Continuous Collector Current

IC

600

mA

Power Dissipation

PD

350

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

NPN (Q1)

PNP (Q2)

SYMBOL

TEST CONDITIONS

MIN

MAX

MIN

MAX

UNITS

ICBO

VCB=60V

-

10

-

nA

ICBO

VCB=50V

-

10

nA

ICBO

VCB=60V, TA=125°C

-

10

-

nA

ICBO

VCB=50V, TA=125°C

-

10

nA

ICEV

VCE=60V, VEB(OFF)=3.0V

-

10

-

nA

ICEV

VCE=30V, VEB(OFF)=500mV

-

50

nA

IEBO

VEB=3.0V

-

10

-

nA

BVCBO

IC=10μA

75

-

60

-

V

BVCEO

IC=10mA

40

-

60

-

V

BVEBO

IE=10μA

6.0

-

5.0

-

V

VCE(SAT)

IC=150mA, IB=15mA

-

0.3

-

0.4

V

VCE(SAT)

IC=500mA, IB=50mA

-

1.0

-

1.6

V

VBE(SAT)

IC=150mA, IB=15mA

0.6

1.2

-

1.3

V

VBE(SAT)

IC=500mA, IB=50mA

-

2.0

-

2.6

V

hFE

VCE=10V, IC=0.1mA

35

-

75

-

hFE

VCE=10V, IC=1.0mA

50

-

100

-

hFE

VCE=10V, IC=10mA

75

-

100

-

hFE

VCE=10V, IC=150mA

100

300

100

300

hFE

VCE=1.0V, IC=150mA

50

-

hFE

VCE=10V, IC=500mA

40

-

50

-

MARKING CODE: L7G

• Device is Halogen Free by design

SOT-563 CASE

R5 (29-June 2015)

www.centr a lsemi.com

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