STUD30L01A datasheet(2/8 Pages) SAMHOP

Part #	STUD30L01A

Description	Super high dense cell design for low RDS(ON).

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Manufacturer	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

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Symbol

Min

Typ

Max

Units

BVDSS

100

V

1

IGSS

±100

nA

VGS(th)

V

30

gFS

S

CISS

2160

pF

COSS

166

pF

CRSS

105

pF

Qg

53

nC

50

53

12

tD(ON)

30

ns

tr

ns

tD(OFF)

ns

tf

ns

VDS=25V,VGS=0V

SWITCHING CHARACTERISTICS

VDD=50V

ID=1A

VGS=10V

RGEN=6ohm

Total Gate Charge

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Delay Time

m ohm

VGS=10V , ID=15A

VDS=10V , ID=15A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

RDS(ON)

Drain-Source On-State Resistance

Forward Transconductance

IDSS

uA

Gate Threshold Voltage

VDS=VGS ,ID=250uA

VDS=80V , VGS=0V

VGS=±20V,VDS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

Reverse Transfer Capacitance

ON CHARACTERISTICS

37

c

f=1.0MHz

c

STU/D30L01A

Ver 1.0

www.samhop.com.tw

Jul,27,2010

2

VSD

nC

Qgs

nC

Qgd

6.5

12

Gate-Drain Charge

Gate-Source Charge

Diode Forward Voltage

VDS=50V,ID=15A,

VGS=10V

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

VGS=0V,IS=3A

0.77

1.3

V

Notes

VDS=50V,ID=15A,VGS=10V

a.Surface Mounted on FR4 Board,t < 10sec.

b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13)

e.Pulse Test:Pulse Width < 1us, Duty Cycle < 1%.

_

23

4

16

V

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=10mA

110

e

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