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STUD30L01A Datasheet(PDF) 1 Page - SamHop Microelectronics Corp. |
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STUD30L01A Datasheet(HTML) 1 Page - SamHop Microelectronics Corp. |
1 / 8 page S mHop Microelectronics C orp. a STU/D30L01A Symbol VDS VGS IDM A ID Units Parameter 100 V V ±20 Gate-Source Voltage Drain-Source Voltage PRODUCT SUMMARY VDSS ID RDS(ON) (m Ω) Typ 100V 30A 30 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. N-Channel Logic Level Enhancement Mode Field Effect Transistor ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Limit Drain Current-Continuous -Pulsed b A Ver 1.0 www.samhop.com.tw Jul,27,2010 1 Details are subject to change without notice. TC=25°C G G S S D D G G S S STU SERIES TO - 252AA( D- PAK ) STD SERIES TO - 251( I - PAK ) W PD °C -55 to 150 TC=25°C THERMAL CHARACTERISTICS Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ, TSTG 50 °C/W Thermal Resistance, Junction-to-Ambient R JA 2.5 °C/W Thermal Resistance, Junction-to-Case R JC TC=70°C A EAS mJ Single Pulse Avalanche Energy d TC=70°C W a a a a 156 30 88 50 Green Product 24 32 |
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