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TS4448RZ Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TS4448RZ Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 5 page CREAT BY ART - Designed for mounting on small surface - Extremely thin/leadless package - High mounting capability, strong surage with stand, high reliability - Pb free and RoHS compliant - Green Compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code - Case: 0603 standard package, molded plastic MIL-STD-750, method 2026 guaranteed - High temperature soldering guaranteed: 260 oC/10s - Polarity: Indicated by cathode band - Weight : 0.003 grams (approximately) SYMBOL UNIT PD mW VRRM V IFRM mA IO mA RθJA ℃/W TJ, TSTG oC SYMBOL UNIT Reverse breakdown voltage V(BR) V CJ pF Reverse recovery time trr ns Document Number: DS_S1407008 - Terminal: Gold plated, solderable per Version: E14 IR VALUE - 25 - 9 150 9 Power dissipation 1 (Note 2) 100 PARAMETER Thermal resistance form junction to ambient (Note 1) Junction capacitance 100 VR=0.5V, f=1.0MHz 80 - Reverse leakage current IF=100mA VR=20V VR=80V - Note: 1 Valid provided that electrodes are kept at ambient temperature Note: 2 Test Condition: IR=100µA Note: 3 Test Condition: IF=IR=10mA, RL=100Ω, IRR=1mA 666 Junction and storage temperature range - 40 to + 125 MIN MAX (Note 3) - TS4448 RZ FEATURES MECHANICAL DATA 0603 Taiwan Semiconductor 300 Small Signal Product PARAMETER Repetitive Peak Reverse Voltage Repetitive Peak Forward Current 150mW High Speed SMD Switching Diode MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25℃ unless otherwise noted) A 2 1.0 Mean forward current 125 Non-repetitive peak forward surge current Pulse Width = 1 µs Pulse Width = 8.3 ms IFSM nA Forward voltage IF=5mA VF 0.62 0.72 V |
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