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PALCE22V10 and PALCE22V10Z Families

ENDURANCE CHARACTERISTICS

The PALCE22V10 is manufactured using Vantis’ advanced electrically-erasable (EE) CMOS process.

This technology uses an EE cell to replace the fuse link used in bipolar parts. As a result, the device

can be erased and reprogrammed—a feature which allows 100% testing at the factory.

INPUT/OUTPUT EQUIVALENT SCHEMATICS FOR SELECTED /4 DEVICES*

Symbol

Parameter

Test Conditions

Value

Unit

Min Pattern Data Retention Time

Max Storage Temperature

10

Years

N

Max Reprogramming Cycles

Normal Programming Conditions

100

Cycles

Input

Output

Preload

Circuitry

ESD

Protection

Feedback

Input

VCC

VCC

100 k

Ω

100 k

Ω

VCC

VCC

VCC

*

16564E-018

Device

Rev Letter

PALCE22V10H-15

H

PALCE22V10H-20H

PALCE22V10H-25

PALCE22V10Q-25I

I