V30202C datasheet(3/6 Pages) VISHAY

Part #	V30202C

Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier

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Manufacturer	VISHAY [Vishay Siliconix]

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V30202C, VF30202C, VB30202C, VI30202C

www.vishay.com

Vishay General Semiconductor

Revision: 31-Oct-14

3

Document Number: 87799

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

Fig. 1 - Maximum Forward Current Derating Curve

Fig. 2 - Forward Power Loss Characteristics Per Diode

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

Fig. 4 - Typical Reverse Characteristics Per Diode

Fig. 5 - Typical Junction Capacitance Per Diode

Fig. 6 - Typical Transient Thermal Impedance Per Device

0

4

8

12

16

20

24

28

32

0

255075

100

125

150

175

Case Temperature (

°C) (D = duty cycle = 0.5)

RthJA = RthJC

TA ,RthJA

V(B,I)30202C

VF30202C

0

1

2

3

4

5

6

7

8

9

10

11

12

13

02468

10

12

14

16

18

Average Forward Current (A)

D = 0.1

D = 0.2

D = 0.3

D = 0.5

D = 1.0

D = 0.8

D = tp/T

T

tp

0.1

1

10

100

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

Instantaneous Forward Voltage (V)

T

A = 150 °C

T

A = 25 °C

T

A = 100 °C

T

A = 125 °C

T

A = 175 °C

0.01

0.1

1

10

100

1000

10 000

100 000

10

20

30

40

50

60

70

80

90

100

Percent of Rated Peak Reverse Voltage (%)

T

A = 100 °C

T

A = 150 °C

T

A = 125 °C

T

A = 25 °C

T

A = 175 °C

10

100

1000

10 000

0.1

1

10

100

Reverse Voltage (V)

T

J = 25 °C

f = 1.0 MHz

V

sig = 50 mVp-p

0.1

1

10

0.01

0.1

1

10

100

t - Pulse Duration (s)

Junction to Case

V(B,I)30202C

VFT30202C

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