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V30202C Datasheet(PDF) 1 Page - Vishay Siliconix |
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V30202C Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 6 page ![]() V30202C, VF30202C, VB30202C, VI30202C www.vishay.com Vishay General Semiconductor Revision: 31-Oct-14 1 Document Number: 87799 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES • Trench MOS Schottky technology generation 2 • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB, and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs max. PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VRRM 200 V IFSM 260 A VF at IF = 15 A (TA = 125 °C) 0.65 V TJ max. 175 °C Package TO-220AB, ITO-220AB, TO-263AB, TO-262AA Diode variations Common cathode TO-220AB 1 2 3 1 K 2 3 TO-263AB 1 2 K TO-262AA PIN 1 PIN 2 K HEATSINK PIN 1 PIN 2 CASE PIN 3 PIN 1 PIN 2 PIN 3 K V30202C VI30202C VB30202C TMBS ® VF30202C ITO-220AB PIN 2 PIN 1 PIN 3 1 2 3 MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V30202C VF30202C VB30202C VI30202C UNIT Maximum repetitive peak reverse voltage VRRM 30 V Maximum average forward rectified current (fig. 1) per device IF(AV) 15 A per diode 10 Maximum DC reverse voltage VDC 160 V Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 260 A Voltage rate of change (rated VR) dV/dt 10 000 V/μs Isolation voltage (ITO-220AB only) from terminal to heatsink, t = 1 min VAC 1500 V Operating junction and storage temperature range TJ, TSTG -40 to +175 °C |
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