KIC7SZ38FU datasheet(2/3 Pages) KEC

Part #	KIC7SZ38FU

Description	SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT(2-INPUT NAND GATE)

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Manufacturer	KEC [KEC(Korea Electronics)]

Direct Link	http://www.keccorp.com

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2 / 3 page

2002. 5. 13

2/3

KIC7SZ38FU

Revision No : 0

Logic Diagram

IN B

(1)

(2)

(4)

IN A

&

OUT Y

ELECTRICAL CHARACTERISTICS

DC Characteristics

CHARACTERISTIC

SYMBOL

TEST CONDITION

Ta=25℃

Ta=-40~85℃

UNIT

VCC(V)

MIN.

TYP.

MAX.

MIN.

MAX.

Input

Voltage

High Level

VIH

-

1.65~1.95

0.75×

VCC

-

0.75×

VCC

-

V

2.3~5.5 0.7×VCC

-

0.7×VCC

-

Low Level

VIL

-

1.65~1.95

-

0.25×

VCC

-

0.25×

VCC

2.3~5.5

-

0.3×VCC

-

0.3×VCC

Output

Leakage

Voltage

High Level

ILKG

VIN=VIL

VOUT = VCC or GND

5.5

-

±5

-

±10

μA

Low Level

VOL

VIN=VIH

IOL=100μA

1.65

-

0

0.1

-

0.1

V

1.8

-

0

0.1

-

0.1

2.3

-

0

0.1

-

0.1

3.0

-

0

0.1

-

0.1

4.5

-

0

0.1

-

0.1

IOL=4mA

1.65

-

0.08

0.24

-

0.24

IOL=8mA

2.3

-

0.10

0.3

-

0.3

IOL=16mA

3.0

-

0.15

0.4

-

0.4

IOL=24mA

3.0

-

0.22

0.55

-

0.55

IOL=32mA

4.5

-

0.22

0.55

-

0.55

Input Leakage Current

IIN

VIN=5.5V or GND

0~5.5

-

±1

-

±10

μA

Power Off Leakage Current

IOFF

VIN or VOUT=5.5V

0.0

-

1

-

10

μA

Quiescent Supply Current

ICC

VIN=5.5V or GND

5.5

-

2.0

-

20

μA

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KIC7SZ38FU Datasheet(PDF) 2 Page - KEC(Korea Electronics)

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