BC848 datasheet(1/2 Pages) WINNERJOIN

Part #	BC848

Description	NPN SILICON TRANSISTOR

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Manufacturer	WINNERJOIN [SHENZHEN YONGERJIA INDUSTRY CO.,LTD]

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WEJ

ELECTRONIC

CO.,LTD

Electrical Characteristics

(Ta=25 C)

Characteristic

Symbol Test Condition

Unit

Max.

Typ.

Min.

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

Collector-Emitter Saturation Voltage

Base-emitter saturatio voltage

Transition Frequency

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

ICEO

IEBO

HFE(1)

VCE(sat)

fT

I =10 A, I =0

C

E

I =10 mA, I =0

C

B

I =1 A, I =0

E

C

V

=45V, I =0

CB

E

V

=5V, I =0

EB

C

V

=5V, I =2mA

CE

C

I =100mA, I =5mA

C

B

I =100mA, I =5mA

C

B

V

=5V, I =10mA

CE

C

,f=100MHz

100

0.1

0.5

1

V

A

V

MHz

5

DC Current Gain (Note)

VBE(sat)

。

NPN SILICON TRANSISTOR

B 8 4 6 - B C 8 4 8

C

BC846

BC847

B 848

C

80

50

30

65

45

30

BC846

BC847

B 848

C

BC846

BC847

B 848

C

V

=70V, I =0

CB

E

V

=25V, I =0

CB

E

BC846

BC847

B 848

C

V

=40V, I =0

CB

E

0.1

A

V

=60V, I =0

CB

E

V

=25V, I =0

CB

E

BC846

BC847

B 848

C

125

220

420

250

475

800

Power dissipation

P

: 0.3 W (Tamb=25 C)

Pluse Drain

I

: 0.1 mA

Reverse Voltage

V

: BC846 80V

BC847 50V

BC848 30V

Operating and storage junction temperature range

T , T

: -55 C to +150 C

Features

M

(BR)CBO

j

stg

C

CM

。

3

1

2

SOT-23

1.BASE

2.EMITTER

3.COLLECTOR

1.

1.3

2.4

Unit:mm

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

RoHS

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