2SJ555_15 datasheet(6/10 Pages) RENESAS

Part #	2SJ555

Description	Silicon P Channel MOS FET

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Manufacturer	RENESAS [Renesas Technology Corp]

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6 / 10 page

2SJ555

Rev.3.00 Sep 07, 2005 page 4 of 7

50

–40

0

40

80

120

160

Case Temperature

Tc (°C)

0

10

20

30

40

Static Drain to Source on State Resistance

vs. Temperature

Pulse Test

ID = –50 A

ID = –60 A

–10 A, –20 A

Forward Transfer Admittance vs.

Drain Current

Drain Current ID (A)

100

30

3

10

0.3

1

0.1

–0.1

–0.3

–1

–3

–30

–10

–100

Tc = –25°C

75°C

VDS = –10 V

Pulse Test

25°C

Reverse Drain Current

IDR (A)

Body-Drain Diode Reverse

Recovery Time

–0.1 –0.3

–1

–3

–10

–30

–100

1000

500

100

200

50

10

20

di / dt = 50 A /

µs

VGS = 0, Ta = 25°C

0

–10

–20

–30

–40

–50

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

50000

10000

20000

5000

500

200

2000

1000

100

Ciss

Coss

Crss

VGS = 0

f = 1 MHz

0

Gate Charge

Qg (nc)

0

–20

–16

–12

–8

–4

–100

–80

–60

–40

–20

Dynamic Input Characteristics

80

160

240

320

400

VDS

VGS

1000

100

200

500

50

20

10

–0.3

–1

–3

–30

–10

–100

–0.1

tf

tr

td(off)

td(on)

Drain Current

ID (A)

Switching Characteristics

VDD = –10 V

–25 V

–50 V

VDD = –50 V

–25 V

–10 V

VGS = –4 V

–20 A

–50 A

–10 A

VGS = –10 V, VDD = –30 V

PW = 10

µs, duty ≤ 1 %

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2SJ555 Datasheet(PDF) 6 Page - Renesas Technology Corp

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