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2SJ555 Datasheet(PDF) 5 Page - Renesas Technology Corp

Part # 2SJ555
Description  Silicon P Channel MOS FET
Download  10 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SJ555 Datasheet(HTML) 5 Page - Renesas Technology Corp

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2SJ555
Rev.3.00 Sep 07, 2005 page 3 of 7
Main Characteristics
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
–100
0
–20
–40
–60
–80
0
–4
–8
–12
–16
–20
–100
0
–20
–40
–60
–80
0
–1–2–3–4–5
Tc = 75°C
200
0
50
100
150
0
50
100
150
200
VDS = –10 V
Pulse Test
–10 V
–5 V
–8 V
–4 V
–3.5 V
–4.5 V
–3 V
VGS = –2.5 V
Pulse Test
Drain to Source Voltage
VDS (V)
Maximum Safe Operation Area
–100
–300
–10
–30
–0.3
–1
–3
–0.1
–0.1
–0.3
–1
–3
–10
–30
–100
–1000
Ta = 25°C
PW
= 10
ms
(1
shot)
DC
Operation
(Tc
= 25°C)
1 ms
10
µs
100
µs
Operation in
this area is
limited by RDS (on)
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–2.0
0
–0.4
–0.8
–1.2
–1.6
0
–4
–8
–12
–16
–20
Pulse Test
ID = –50 A
–20 A
–5 A
–10 A
Drain Current
ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
20
10
2
5
1
–3
–100 –300
–1
–30
–10
–1000
100
50
VGS = –4 V
–10 V
Pulse Test
–25°C
25°C


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