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2SJ555 Datasheet(PDF) 4 Page - Renesas Technology Corp |
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2SJ555 Datasheet(HTML) 4 Page - Renesas Technology Corp |
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4 / 10 page  2SJ555 Rev.3.00 Sep 07, 2005 page 2 of 7 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Value Unit Drain to source voltage VDSS –60 V Gate to source voltage VGSS ±20 V Drain current ID –60 A Drain peak current ID (pulse) Note 1 –240 A Body to drain diode reverse drain current IDR –60 A Avalanche current IAP Note 3 –60 A Avalanche energy EAR Note 3 308 mJ Channel dissipation Pch Note 2 125 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25 °C 3. Value at Tch = 25 °C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR) DSS –60 — — V ID = –10 mA, VGS = 0 Gate to source breakdown voltage V (BR) GSS ±20 — — V IG = ±100 µA, VDS = 0 Zero gate voltage drain current IDSS — — –10 µA VDS = –60 V, VGS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 Gate to source cutoff voltage VGS (off) –1.0 — –2.0 V ID = –1 mA, VDS = –10 V RDS (on) — 0.017 0.022 Ω ID = –30 A, VGS = –10 V Note 4 Static drain to source on state resistance RDS (on) — 0.024 0.036 Ω ID = –30 A, VGS = –4 V Note 4 Forward transfer admittance |yfs| 27 45 — S ID = –30 A, VDS = –10 V Note 4 Input capacitance Ciss — 4100 — pF Output capacitance Coss — 2100 — pF Reverse transfer capacitance Crss — 450 — pF VDS = –10 V VGS = 0 f = 1 MHz Turn-on delay time td (on) — 32 — ns Rise time tr — 270 — ns Turn-off delay time td (off) — 570 — ns Fall time tf — 360 — ns VGS = –10 V ID = –30 A RL = 1 Ω Body to drain diode forward voltage VDF — –1.1 — V IF = –60 A, VGS = 0 Body to drain diode reverse recovery time trr — 115 — ns IF = –60 A, VGS = 0 diF/dt = 50 A/ µs Note: 4. Pulse test |
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Similar Description - 2SJ555_15 |
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