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IRL620 Datasheet(PDF) 2 Page - International Rectifier |
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IRL620 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRL620 Notes: Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage — — 1.8 V TJ = 25°C, IS = 5.2A, V GS = 0V trr Reverse Recovery Time — 180 270 ns TJ = 25°C, IF = 5.2A Qrr Reverse Recovery Charge — 1.1 1.7 µC di/dt = 100A/µs ton Forward Turn-On Time Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 50V, starting T J = 25°C, L = 6.9mH RG = 25Ω, IAS = 5.2A. (See Figure 12) ISD ≤ 5.2A, di/dt ≤ 120A/µs, V DD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. Source-Drain Ratings and Characteristics Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 200 — — V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient — 0.27 — V/°C Reference to 25°C, I D = 1mA — — 0.80 VGS = 5.0V, ID = 3.1A — — 1.0 VGS = 4.0V, ID = 2.6A VGS(th) Gate Threshold Voltage 1.0 — 2.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 1.2 — — S VDS = 50V, ID = 3.1A — — 25 VDS = 200V, VGS = 0V — — 250 VDS = 160V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage — — 100 VGS = 10V Gate-to-Source Reverse Leakage — — -100 VGS = -10V Qg Total Gate Charge — — 16 ID = 5.2A Qgs Gate-to-Source Charge — — 2.7 nC VDS = 160V Qgd Gate-to-Drain ("Miller") Charge — — 9.6 VGS = 5.0V, See Fig. 6 and 13 td(on) Turn-On Delay Time — 4.2 — VDD = 100V tr Rise Time — 31 — ID = 9.0A td(off) Turn-Off Delay Time — 18 — RG = 6.0Ω tf Fall Time — 17 — RD = 11Ω, See Fig. 10 Between lead, 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance — 360 — VGS = 0V Coss Output Capacitance — 91 — pF VDS = 25V Crss Reverse Transfer Capacitance — 27 — ƒ = 1.0MHz, See Fig. 5 Intrinsic turn-on time is negligible (turn-on is dominated by L S+LD) — — 21 — — 5.2 A ns IDSS Drain-to-Source Leakage Current IGSS LD Internal Drain Inductance — 4.5 — LS Internal Source Inductance — 7.5 — nH nA µA RDS(ON) Static Drain-to-Source On-Resistance Ω To Order Next Data Sheet Index Previous Datasheet |
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