IRL620

PD -9.1217

Revision 0

Absolute Maximum Ratings

Thermal Resistance

Parameter

Max.

Units

5.2

3.3

A

Pulsed Drain Current

21

Power Dissipation

50

W

Linear Derating Factor

0.40

W/°C

Gate-to-Source Voltage

±10

V

Single Pulse Avalanche Energy

125

mJ

Avalanche Current

5.2

A

Repetitive Avalanche Energy

5.0

mJ

dv/dt

Peak Diode Recovery dv/dt

5.0

V/ns

Operating Junction and

-55 to + 150

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

300 (1.6mm from case)

Mounting torque, 6-32 or M3 screw.

10 lbf•in (1.1N•m)

Parameter

Min.

Typ.

Max.

Units

Junction-to-Case

—

—

2.5

Case-to-Sink, Flat, Greased Surface

—

0.50

—

°C/W

Junction-to-Ambient

—

—

62

Dynamic dv/dt Rating

Repetitive Avalanche Rated

Logic-Level Gate Drive

Fast Switching

Ease of paralleling

Simple Drive Requirements

Third Generation HEXFETs from International Rectifier provide the designer

with the best combination of fast switching, ruggedized device design, low on-

resistance and cost-effectiveness.

The TO-220 package is universally preferred for all commercial-industrial

applications at power dissipation levels to approximately 50 watts. The low thermal

resistance and low package cost of the TO-220 contribute to its wide acceptance

throughout the industry.

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