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IRG4PH40KD Datasheet(PDF) 5 Page - International Rectifier

Part # IRG4PH40KD
Description  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.47V, @Vge=15V, Ic=15A)
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRG4PH40KD Datasheet(HTML) 5 Page - International Rectifier

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IRG4PH40KD
www.irf.com
5
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
0
20
40
60
80
100
0
4
8
12
16
20
Q , Total Gate Charge (nC)
G

V
= 400V
I
= 15A
CC
C
1
10
100
0
500
1000
1500
2000
2500
V
, Collector-to-Emitter Voltage (V)
CE

V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C
SHORTED
GE
ies
ge
gc ,
ce
res
gc
oes
ce
gc

Cres

Coes

Cies
0
10
20
30
40
50
2.0
2.2
2.4
2.6
2.8
3.0
R
, Gate Resistance (Ohm)
G

V
= 480V
V
= 15V
T
= 25
C
I
= 15A
CC
GE
J
C
°
RG , Gate Resistance ( Ω )
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.1
1
10
100
T , Junction Temperature ( C )
J
°

R
= Ohm
V
= 15V
V
= 480V
G
GE
CC

I =
A
30
C

I =
A
15
C

I =
A
7.5
C
10
Ω
800V
800V


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