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IRG4PH40KD Datasheet(PDF) 2 Page - International Rectifier |
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IRG4PH40KD Datasheet(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRG4PH40KD 2 www.irf.com Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 94 140 IC = 15A Qge Gate - Emitter Charge (turn-on) — 14 22 nC VCC = 400V See Fig.8 Qgc Gate - Collector Charge (turn-on) — 37 55 VGE = 15V td(on) Turn-On Delay Time — 50 — tr Rise Time — 31 — TJ = 25°C td(off) Turn-Off Delay Time — 96 140 IC = 15A, VCC = 800V tf Fall Time — 220 330 VGE = 15V, RG = 10 Ω Eon Turn-On Switching Loss — 1.31 — Energy losses include "tail" Eoff Turn-Off Switching Loss — 1.12 — mJ and diode reverse recovery Ets Total Switching Loss — 2.43 2.8 See Fig. 9,10,18 tsc Short Circuit Withstand Time 10 —— µs VCC = 720V, TJ = 125°C VGE = 15V, RG = 10 Ω , VCPK < 500V td(on) Turn-On Delay Time — 49 — TJ = 150°C, See Fig. 10,11,18 tr Rise Time — 33 — IC = 15A, VCC = 800V td(off) Turn-Off Delay Time — 290 — VGE = 15V, RG = 10 Ω, tf Fall Time — 440 — Energy losses include "tail" Ets Total Switching Loss — 5.1 — mJ and diode reverse recovery LE Internal Emitter Inductance — 13 — nH Measured 5mm from package Cies Input Capacitance — 1600 — VGE = 0V Coes Output Capacitance — 77 — pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance — 26 —ƒ = 1.0MHz trr Diode Reverse Recovery Time — 63 95 ns TJ = 25°C See Fig. — 106 160 TJ = 125°C 14 IF = 8.0A Irr Diode Peak Reverse Recovery Current — 4.5 8.0 A TJ = 25°C See Fig. — 6.2 11 TJ = 125°C 15 VR = 200V Qrr Diode Reverse Recovery Charge — 140 380 nC TJ = 25°C See Fig. — 335 880 TJ = 125°C 16 di/dt = 200Aµs di(rec)M/dt Diode Peak Rate of Fall of Recovery — 133 — A/µs TJ = 25°C See Fig. During tb — 85 — TJ = 125°C 17 Switching Characteristics @ TJ = 25°C (unless otherwise specified) ns ns Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage S 1200 —— VVGE = 0V, IC = 250µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.37 — V/°CVGE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage — 2.74 3.4 IC = 15A VGE = 15V — 3.29 — VIC = 30A See Fig. 2, 5 — 2.53 — IC = 15A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -3.3 — mV/°CVCE = VGE, IC = 250µA gfe Forward Transconductance T 8.0 12 — SVCE = 100V, IC = 15A ICES Zero Gate Voltage Collector Current —— 250 µA VGE = 0V, VCE = 1200V —— 3000 VGE = 0V, VCE = 1200V, TJ = 150°C VFM Diode Forward Voltage Drop — 2.6 3.3 V IC = 8.0A See Fig. 13 — 2.4 3.1 IC = 8.0A, TJ = 125°C IGES Gate-to-Emitter Leakage Current —— ±100 nA VGE = ±20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) |
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