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SMG3401 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SMG3401 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 4 page Electrical Characteristics( Tj=25 C Unless otherwise specified) Total Gate Charge RDS(ON) Parameter Symbol Max. Typ. Test Condition Min. Unit Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current (Tj=55 ) Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS VGS(th) IGSS IDSS Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf -30 -0.7 100 -1 -5 50 4.2A 9.4 2 3 4 15 _ _ 6.3 3.2 38.2 12 VDS=-15V 6 L 3.6 954 115 77 1 f=1.0MHz Ω _ Gate Resistance Rg Ω 6 _ f=1.0MHz ± V V nA uA uA m nC nS pF Ω VGS=0V VDS=- 5V VGS=-10V RG= R = Ω ID=- A VDS=- V VGS=-4.5V VGS=-10V, ID=- VGS=0V, ID=-250uA VGS= 12 24 V ± VDS=- V,VGS=0 VDS=-24V,VGS=0 VDS=VGS, ID=-250uA _ _ Source-Drain Diode _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 2 _ _ _ -1 3 . 2 2 o C o C o Parameter Symbol Max. Typ. Test Condition Min. Unit Forward On Voltage VSD _ _ IS=-1.0 -1.0 -4 20.2 11.2 A, VGS=0V. V Reverse Recovery Charge dl/dt=100A/uS Is= A, VGS=0 Reverse Recovery Time Qrr Trr _ _ _ _ nS nC 2 2 Continuous Source Current (Body Diode) IS _ _ VD=VG=0V,VS=-1.0V -2.2 A http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width 300us, dutycycle 2%. 3.Surface mounted on 1 in 2 copper pad of FR4 board; 270 when mounted on min. copper pad. ° C/W ≦ ≦ 01-Jun-2002 Rev. A Page 2 of 4 Elektronische Bauelemente SMG3401 -4.2A, -30V,RDS(ON) 50m P-Channel Enhancement Mode Power Mos.FET Ω 65 4 0 VGS=-4.5V, ID=- . A _ _ 120 1 0 VGS=-2.5V, ID=- . A _ _ |
Similar Part No. - SMG3401_15 |
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Similar Description - SMG3401_15 |
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