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2SJ181(L) Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # 2SJ181(L)
Description  Silicon P Channel MOS FET
Download  7 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SJ181(L) Datasheet(HTML) 3 Page - Renesas Technology Corp

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2SJ181(L), 2SJ181(S)
Preliminary
R07DS0395EJ0300 Rev.3.00
Page 3 of 6
May 16, 2011
Main Characteristics
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
–1.0
0
–0.2
–0.4
–0.6
–0.8
0
–10
–20
–30
–40
–50
–0.5
0
–0.1
–0.2
–0.3
–0.4
0
–2–4–6–8
–10
Tc = –25°C
25°C
75°C
40
0
10
20
30
0
50
100
150
200
VDS = –20 V
Pulse Test
–10 V
–4.5 V
–5 V
VGS = –4 V
Pulse Test
Drain to Source Voltage
VDS (V)
Maximum Safe Operation Area
–3
–1
–0.3
–0.1
–0.01
–0.03
–10
–20
–50 –100 –200
–500 –1000
–10
Ta = 25°C
10
μs
PW
= 10
ms
(1
shot)
DC
Oper
ation
(Tc
= 25°C)
1 ms
100
μs
Operation in
this area is
limited by RDS (on)
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–20
0
–4
–8
–12
–16
0
–4
–8
–12
–16
–20
Pulse Test
ID = –0.5 A
–0.1 A
–0.2 A
Drain Current
ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
100
50
10
20
5
–0.1
–0.5
–1
–0.02
–0.2
–2
–0.05
500
200
VGS = –10 V
–15 V
Pulse Test
–6 V


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