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2SJ181(L) Datasheet(PDF) 2 Page - Renesas Technology Corp

Part # 2SJ181(L)
Description  Silicon P Channel MOS FET
Download  7 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SJ181(L) Datasheet(HTML) 2 Page - Renesas Technology Corp

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2SJ181(L), 2SJ181(S)
Preliminary
R07DS0395EJ0300 Rev.3.00
Page 2 of 6
May 16, 2011
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
–600
V
ID = –10 mA, VGS = 0
Gate to source breakdown voltage
V (BR) GSS
±15
V
IG = ±100 μA, VDS = 0
Gate to source leak current
IGSS
±10
μA
VGS = ±12 V, VDS = 0
Zero gate voltage drain current
IDSS
–100
μA
VDS = –500 V, VGS = 0
Gate to source cutoff voltage
VGS (off)
–2.0
–4.0
V
ID = –1 mA, VDS = –10 V
Static drain to source on state resistance
RDS (on)
15
25
Ω
ID = –0.3 A, VGS = –10 V
Note 3
Forward transfer admittance
|yfs|
0.3
0.45
S
ID = –0.3 A, VDS = –20 V
Note 3
Input capacitance
Ciss
220
pF
Output capacitance
Coss
55
pF
Reverse transfer capacitance
Crss
13
pF
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time
td (on)
7
ns
Rise time
tr
20
ns
Turn-off delay time
td (off)
35
ns
Fall time
tf
35
ns
ID = –0.3 A
VGS = –10 V
RL = 100 Ω
Body to drain diode forward voltage
VDF
–0.85
V
IF = –0.5 A, VGS = 0
Body to drain diode reverse recovery time
trr
230
ns
IF = –0.5 A, VGS = 0
diF/dt = 50 A/μs
Note:
3. Pulse test


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