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2SJ181(L) Datasheet(PDF) 1 Page - Renesas Technology Corp |
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2SJ181(L) Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page R07DS0395EJ0300 Rev.3.00 Page 1 of 6 May 16, 2011 Preliminary Datasheet 2SJ181(L), 2SJ181(S) Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZD-A (Package name: DPAK (L)-(1) ) RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 1. Gate 2. Drain 3. Source 4. Drain D G S 1 2 3 4 1 2 3 4 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Value Unit Drain to source voltage VDSS –600 V Gate to source voltage VGSS ±15 V Drain current ID –0.5 A Drain peak current ID (pulse) Note 1 –1.0 A Body to drain diode reverse drain current IDR –0.5 A Channel dissipation Pch Note 2 20 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25 °C R07DS0395EJ0300 (Previous: REJ03G0848-0200) Rev.3.00 May 16, 2011 |
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