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2SJ181(L) Datasheet(PDF) 1 Page - Renesas Technology Corp

Part # 2SJ181(L)
Description  Silicon P Channel MOS FET
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SJ181(L) Datasheet(HTML) 1 Page - Renesas Technology Corp

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R07DS0395EJ0300 Rev.3.00
Page 1 of 6
May 16, 2011
Preliminary Datasheet
2SJ181(L), 2SJ181(S)
Silicon P Channel MOS FET
Description
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004ZD-A
(Package name: DPAK (L)-(1) )
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
1. Gate
2. Drain
3. Source
4. Drain
D
G
S
1
2
3
4
1
2
3
4
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
–600
V
Gate to source voltage
VGSS
±15
V
Drain current
ID
–0.5
A
Drain peak current
ID (pulse)
Note 1
–1.0
A
Body to drain diode reverse drain current
IDR
–0.5
A
Channel dissipation
Pch
Note 2
20
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 μs, duty cycle ≤ 1%
2. Value at Tc = 25
°C
R07DS0395EJ0300
(Previous: REJ03G0848-0200)
Rev.3.00
May 16, 2011


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