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2SJ181(L) Datasheet(PDF) 5 Page - Renesas Technology Corp

Part # 2SJ181(L)
Description  Silicon P Channel MOS FET
Download  7 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SJ181(L) Datasheet(HTML) 5 Page - Renesas Technology Corp

  2SJ181(L)_15 Datasheet HTML 1Page - Renesas Technology Corp 2SJ181(L)_15 Datasheet HTML 2Page - Renesas Technology Corp 2SJ181(L)_15 Datasheet HTML 3Page - Renesas Technology Corp 2SJ181(L)_15 Datasheet HTML 4Page - Renesas Technology Corp 2SJ181(L)_15 Datasheet HTML 5Page - Renesas Technology Corp 2SJ181(L)_15 Datasheet HTML 6Page - Renesas Technology Corp 2SJ181(L)_15 Datasheet HTML 7Page - Renesas Technology Corp  
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2SJ181(L), 2SJ181(S)
Preliminary
R07DS0395EJ0300 Rev.3.00
Page 5 of 6
May 16, 2011
–1.0
0
–0.2
–0.4
–0.6
–0.8
0
Source to Drain Voltage
VSD
(V)
Reverse Drain Current vs.
Source to Drain Voltage
–0.2
–0.4
–0.6
–0.8
–1.0
Pulse Test
VGS = –10 V
0, 5 V
tr
td(on)
Vin
90%
90%
10%
10%
Vout
td(off)
90%
10%
tf
Switching Time Test Circuit
Waveform
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
0.3
0.1
0.03
0.01
10
μ
100
μ
1 m
10 m
100 m
1
10
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot
pulse
PDM
PW
T
D =
PW
T
θch – c (t) = γ s (t) • θch – c
θch – c = 6.25°C/W, Tc = 25°C
Vin Monitor
D.U.T.
Vin
–10 V
RL
Vout
Monitor
50
Ω
VDD
= –30 V


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