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2SJ181(L) Datasheet(PDF) 4 Page - Renesas Technology Corp |
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2SJ181(L) Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page 2SJ181(L), 2SJ181(S) Preliminary R07DS0395EJ0300 Rev.3.00 Page 4 of 6 May 16, 2011 40 –40 0 40 80 120 160 Case Temperature Tc (°C) 0 8 16 24 32 Static Drain to Source on State Resistance vs. Temperature Pulse Test VGS = –10 V ID = –0.5 A –0.2 A Forward Transfer Admittance vs. Drain Current Drain Current ID (A) 2 1 0.2 0.5 0.1 0.02 0.05 –0.05 –0.1 –0.2 –0.5 –1 –2 –5 Tc = –25°C 75°C VDS = –20 V Pulse Test 25°C Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time –0.05 –0.1 –0.2 –0.5 –1 –2 –5 1000 500 200 50 100 20 10 di / dt = 100 A / μs VGS = 0, Ta = 25°C 0 –10 –20 –30 –40 –50 Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage 1000 300 100 30 10 3 1 Ciss Coss Crss VGS = 0 f = 1 MHz –0 0 Gate Charge Qg (nc) 0 –20 –16 –12 –8 –4 –1000 –800 –600 –400 –200 Dynamic Input Characteristics 4 8 12 16 20 VDS VGS VDD = –100 V –250 V –400 V ID = –0.5 A 500 200 100 20 50 10 5 –0.1 –0.2 –0.5 –1 –2 –5 –0.05 tf tr td(off) td(on) Drain Current ID (A) Switching Characteristics –0.1 A VDD = –100 V –250 V –400 V VGS = –10 V, VDD = –30 V PW = 5 μs, duty ≤ 1 % |
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