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2SJ181(L) Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # 2SJ181(L)
Description  Silicon P Channel MOS FET
Download  7 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SJ181(L) Datasheet(HTML) 4 Page - Renesas Technology Corp

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2SJ181(L), 2SJ181(S)
Preliminary
R07DS0395EJ0300 Rev.3.00
Page 4 of 6
May 16, 2011
40
–40
0
40
80
120
160
Case Temperature
Tc (°C)
0
8
16
24
32
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
VGS = –10 V
ID = –0.5 A
–0.2 A
Forward Transfer Admittance vs.
Drain Current
Drain Current ID (A)
2
1
0.2
0.5
0.1
0.02
0.05
–0.05 –0.1 –0.2
–0.5
–1
–2
–5
Tc = –25°C
75°C
VDS = –20 V
Pulse Test
25°C
Reverse Drain Current
IDR (A)
Body-Drain Diode Reverse
Recovery Time
–0.05 –0.1 –0.2
–0.5
–1
–2
–5
1000
500
200
50
100
20
10
di / dt = 100 A /
μs
VGS = 0, Ta = 25°C
0
–10
–20
–30
–40
–50
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
1000
300
100
30
10
3
1
Ciss
Coss
Crss
VGS = 0
f = 1 MHz
–0
0
Gate Charge
Qg (nc)
0
–20
–16
–12
–8
–4
–1000
–800
–600
–400
–200
Dynamic Input Characteristics
4
8
12
16
20
VDS
VGS
VDD = –100 V
–250 V
–400 V
ID = –0.5 A
500
200
100
20
50
10
5
–0.1 –0.2
–0.5
–1
–2
–5
–0.05
tf
tr
td(off)
td(on)
Drain Current
ID (A)
Switching Characteristics
–0.1 A
VDD = –100 V
–250 V
–400 V
VGS = –10 V, VDD = –30 V
PW = 5
μs, duty ≤ 1 %


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