IRFP250N

10/09/00

Parameter

Max.

Units

30

21

A

Pulsed Drain Current



120

Power Dissipation

214

W

Linear Derating Factor

1.4

W/°C

Gate-to-Source Voltage

± 20

V

Single Pulse Avalanche Energy

‚

315

mJ

Avalanche Current



30

A

Repetitive Avalanche Energy



21

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒ

8.6

V/ns

Operating Junction and

-55 to +175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew

10 lbf•in (1.1N•m)

Absolute Maximum Ratings

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

0.7

Case-to-Sink, Flat, Greased Surface

0.24

–––

°C/W

Junction-to-Ambient

–––

40

Thermal Resistance

www.irf.com

1

Fifth Generation HEXFETs from International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized device design that

HEXFET Power MOSFETs are well known for, provides the designer with an

extremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial applications where

higher power levels preclude the use of TO-220 devices. The TO-247 is similar

but superior to the earlier TO-218 package because of its isolated mounting hole.

Description

S

D

G

TO-247AC

PD - 94008