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IRF9953 Datasheet(PDF) 1 Page - International Rectifier |
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IRF9953 Datasheet(HTML) 1 Page - International Rectifier |
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1 / 7 page  PRELIMINARY HEXFET® Power MOSFET PD - 9.1560A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. 8/25/97 SO-8 VDSS = -30V RDS(on) = 0.25Ω IRF9953 Description Recommended upgrade: IRF7306 or IRF7316 Lower profile/smaller equivalent: IRF7506 Symbol Maximum Units Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ± 20 TA = 25°C -2.3 TA = 70°C -1.8 Pulsed Drain Current IDM -10 Continuous Source Current (Diode Conduction) IS 1.6 TA = 25°C 2.0 TA = 70°C 1.3 Single Pulse Avalanche Energy EAS 57 mJ Avalanche Current IAR -1.3 A Repetitive Avalanche Energy EAR 0.20 mJ Peak Diode Recovery dv/dt dv/dt -5.0 V/ ns Junction and Storage Temperature Range TJ, TSTG -55 to + 150 °C Thermal Resistance Ratings Parameter Symbol Limit Units Maximum Junction-to-Ambient RθJA 62.5 °C/W Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted) Continuous Drain Current Maximum Power Dissipation A ID PD V W D1 D1 D2 D2 G1 S2 G2 S1 T op V iew 8 1 2 3 4 5 6 7 l Generation V Technology l Ultra Low On-Resistance l Dual P-Channel MOSFET l Surface Mount l Very Low Gate Charge and Switching Losses l Fully Avalanche Rated |
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