DATA SHEET

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE3503M04

C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER

N-CHANNEL HJ-FET

Document No. PG10456EJ03V0DS (3rd edition)

Date Published January 2009 NS

Printed in Japan

2003, 2009

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

FEATURES

• Super low noise figure and high associated gain

• Flat-lead 4-pin thin-type super minimold (M04) package

APPLICATIONS

• DBS LNB gain-stage, Mix-stage

• Low noise amplifier for microwave communication system

ORDERING INFORMATION

Part Number

Order Number

Package

Quantity

Marking

Supplying Form

NE3503M04

NE3503M04-A

50 pcs (Non reel)

V75

NE3503M04-T2

NE3503M04-T2-A

3 kpcs/reel

NE3503M04-T2B

NE3503M04-T2B-A

Flat-lead 4-pin thin-

type super minimold

(M04) (Pb-Free)

15 kpcs/reel

• 8 mm wide embossed taping

• Pin 1 (Source), Pin 2 (Drain) face

the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: NE3503M04

°C)

Parameter

Symbol

Ratings

Unit

Drain to Source Voltage

4.0

V

Gate to Source Voltage

−3.0

V

Drain Current

mA

Gate Current

80

Total Power Dissipation

125

mW

Channel Temperature

+125

°C

Storage Temperature

−65 to +125

°C

<R>