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NE3503M04 Datasheet(PDF) 4 Page - Renesas Technology Corp |
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NE3503M04 Datasheet(HTML) 4 Page - Renesas Technology Corp |
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4 / 11 page  Data Sheet PG10456EJ03V0DS 2 NE3503M04 RECOMMENDED OPERATING CONDITIONS (TA = +25 °C) Parameter Symbol MIN. TYP. MAX. Unit Drain to Source Voltage VDS 1 2 3 V Drain Current ID 5 10 15 mA Input Power Pin − − 0 dBm ELECTRICAL CHARACTERISTICS (TA = +25 °C, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Gate to Source Leak Current IGSO VGS = −3.0 V − 0.5 10 μA Saturated Drain Current IDSS VDS = 2 V, VGS = 0 V 25 40 70 mA Gate to Source Cutoff Voltage VGS (off) VDS = 2 V, ID = 100 μA −0.2 −0.7 −1.5 V Transconductance gm VDS = 2 V, ID = 10 mA 40 55 − mS Noise Figure NF VDS = 2 V, ID = 10 mA, f = 12 GHz − 0.45 0.65 dB Associated Gain Ga 11.0 12.0 − dB <R> <R> <R> <R> <R> <R> |
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