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IRF7463 Datasheet(PDF) 2 Page - International Rectifier

Part # IRF7463
Description  Power MOSFET(Vdss=30V, Rds(on)max=0.008ohm, Id=14A)
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF7463 Datasheet(HTML) 2 Page - International Rectifier

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IRF7463
2
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Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
31
–––
–––
S
VDS = 24V, ID = 14A
Qg
Total Gate Charge
–––
34
51
ID = 14A
Qgs
Gate-to-Source Charge
–––
7.5
11
nC
VDS = 24V
Qgd
Gate-to-Drain ("Miller") Charge
–––
13
20
VGS = 5.0V,
„
td(on)
Turn-On Delay Time
–––
20
–––
VDD = 15V,
tr
Rise Time
–––
16
–––
ID = 1.0A
td(off)
Turn-Off Delay Time
–––
41
–––
RG = 6.0Ω
tf
Fall Time
–––
44
–––
VGS = 4.5V
„
Ciss
Input Capacitance
–––
3110 –––
VGS = 0V
Coss
Output Capacitance
–––
850
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
130
–––
pF
ƒ = 1.0MHz
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
‚
–––
320
mJ
IAR
Avalanche Current

–––
14
A
EAR
Repetitive Avalanche Energy

–––
0.25
mJ
Avalanche Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.2
V
TJ = 25°C, IS = 2.5A, VGS = 0V
„
trr
Reverse Recovery Time
–––
64
96
ns
TJ = 25°C, IF = 2.5A
Qrr
Reverse Recovery Charge
–––
99
150
nC
di/dt = 100A/µs
„
Diode Characteristics
2.5
110
A
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS
Drain-to-Source Leakage Current
RDS(on)
Static Drain-to-Source On-Resistance
Parameter
Min.
Typ.
Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.029
–––
V/°C
Reference to 25°C, ID = 1mA
–––
0.0063 0.0080
VGS = 10V, ID = 14A
„
–––
0.0074 0.0095
VGS = 4.5V, ID = 12A
„
–––
0.0105 0.020
VGS = 2.8V, ID = 3.5A
„
VGS(th)
Gate Threshold Voltage
0.6
–––
2.0
V
VDS = VGS, ID = 250µA
–––
–––
20
µA
VDS = 24V, VGS = 0V
–––
–––
100
VDS = 24V, VGS = 0V, TJ = 100°C
Gate-to-Source Forward Leakage
–––
–––
200
VGS = 12V
Gate-to-Source Reverse Leakage
–––
–––
-200
nA
VGS = -12V


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