IRF7458 datasheet(1/8 Pages) IRF

Part #	IRF7458

Description	Power MOSFET(Vdss=30V, Rds(on)max=8.0mohm, Id=14A)

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Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

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3/25/01

IRF7458

SMPS MOSFET

HEXFET® Power MOSFET

VDSS

RDS(on) max

ID

30V

8.0m

Ω

14A

Symbol

Parameter

Typ.

Max.

Units

RθJL

Junction-to-Drain Lead

–––

20

RθJA

Junction-to-Ambient

–––

50

°C/W

Thermal Resistance

Notes

through are on page 8

SO-8

To p V ie w

8

1

2

3

4

5

6

7

D

G

S

A

S

A

PD- 93892C

Applications

Benefits

l Ultra-Low Gate Impedance

l Very Low RDS(on)

l Fully Characterized Avalanche Voltage

and Current

l High Frequency Isolated DC-DC

Converters with Synchronous Rectification

for Telecom and Industrial Use

l High Frequency Buck Converters for

Computer Processor Power

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-to-Source Voltage

± 30

V

ID @ TA = 25°C

Continuous Drain Current, VGS @ 10V

14

ID @ TA = 70°C

Continuous Drain Current, VGS @ 10V

11

A

IDM

Pulsed Drain Current

110

PD @TA = 25°C

Maximum Power Dissipation

2.5

W

PD @TA = 70°C

Maximum Power Dissipation

1.6

W

Linear Derating Factor

0.02

mW/°C

TJ , TSTG

Junction and Storage Temperature Range

-55 to + 150

°C

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