IRF3710

01/17/02

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

0.75

Case-to-Sink, Flat, Greased Surface

0.50

–––

°C/W

Junction-to-Ambient

–––

62

Thermal Resistance

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1

S

D

G

TO-220AB

advanced processing techniques to achieve extremely low on-resistance

per silicon area. This benefit, combined with the fast switching speed and

ruggedized device design that HEXFET power MOSFETs are well known

for, provides the designer with an extremely efficient and reliable device for

use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial

applications at power dissipation levels to approximately 50 watts. The low

thermal resistance and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

Description

Absolute Maximum Ratings

Parameter

Max.

Units

57

40

A

Pulsed Drain Current



230

Power Dissipation

200

W

Linear Derating Factor

1.3

W/°C

Gate-to-Source Voltage

± 20

V

Avalanche Current



28

A

Repetitive Avalanche Energy



20

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒ

5.8

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew

10 lbf•in (1.1N•m)

PD - 91309A