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IRLR8726 Datasheet(PDF) 7 Page - Kersemi Electronic Co., Ltd. |
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IRLR8726 Datasheet(HTML) 7 Page - Kersemi Electronic Co., Ltd. |
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7 / 11 page  Fig 15. Gate Charge Test Circuit Fig 16. Gate Charge Waveform Vds Vgs Id Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 14. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs 1K VCC DUT 0 L S 20K Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period *** VGS = 5V for Logic Level Devices *** + - + + + - - - RG VDD • dv/dt controlled by RG • Driver same type as D.U.T. • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test D.U.T ** * * Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel IRLR/U8726PBF 2014-8-16 7 www.kersemi.com |
Similar Part No. - IRLR8726 |
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Similar Description - IRLR8726 |
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