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IR2113 Datasheet(PDF) 5 Page - International Rectifier |
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IR2113 Datasheet(HTML) 5 Page - International Rectifier |
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5 / 14 page  IR2113 CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-65 Thickness of Gate Oxide 800Å Connections Material Poly Silicon First Width 4 µm Layer Spacing 6 µm Thickness 5000Å Material Al - Si (Si: 1.0% ±0.1%) Second Width 6 µm Layer Spacing 9 µm Thickness 20,000Å Contact Hole Dimension 8 µm X 8 µm Insulation Layer Material PSG (SiO2) Thickness 1.5 µm Passivation Material PSG (SiO2) Thickness 1.5 µm Method of Saw Full Cut Method of Die Bond Ablebond 84 - 1 Wire Bond Method Thermo Sonic Material Au (1.0 mil / 1.3 mil) Leadframe Material Cu Die Area Ag Lead Plating Pb : Sn (37 : 63) Package Types 14 & 16 Lead PDIP / 16 Lead SOIC Materials EME6300 / MP150 / MP190 Remarks: Device Information Process & Design Rule HVDCMOS 4.0 µm Transistor Count 220 Die Size 98 X 126 X 26 (mil) Die Outline To Order Next Data Sheet Index Previous Datasheet |
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