RJF0604DPD

Target Specifications

R07DS0713EJ0200 Rev.2.00

Page 2 of 7

Nov 05, 2013

Typical Operation Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Input voltage

3.5

—

—

V

—

—

1.2

V

Input current

(Gate non shut down)

—

—

100

μA

—

—

50

μA

—

—

1

μA

Input current

(Gate shut down)

—

0.8

—

mA

—

0.35

—

mA

Shut down temperature

Tsd

—

175

—

°C

Channel temperature

Gate operation voltage

Vop

3.5

—

12

V

Drain current

(Current limitation value)

5

—

—

A

Note 4

Note;

4. Pulse test

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain current

—

—

17

A

Note 5

—

—

10

mA

5

—

—

A

Note 5

Drain to source breakdown

voltage

60

—

—

V

Gate to source breakdown

voltage

16

—

—

V

–2.5

—

—

V

Gate to source leak current

—

—

100

μA

—

—

50

μA

—

—

1

μA

—

—

–100

μA

Input current (shut down)

—

0.8

—

mA

—

0.35

—

mA

Zero gate voltage drain current

—

—

10

μA

Gate to source cutoff voltage

1.1

—

2.1

V

Forward transfer admittance

4

9

—

S

Note 5

Static drain to source on state

resistance

—

58

100

m

Ω

Note 5

—

42

75

m

Ω

Note 5

Output capacitance

Coss

—

276

—

pF

Turn-on delay time

—

1.6

—

μs

Ω

Rise time

—

4.7

—

μs

Turn-off delay time

—

3.7

—

μs

Fall time

—

4.4

—

μs

Body-drain diode forward

voltage

—

0.81

—

V

Body-drain diode reverse

recovery time

—

67

—

ns

μs

Over load shut down

operation time

Note 6

—

3.4

—

ms

—

1.2

—

ms

Notes: 5. Pulse test

6. Including the junction temperature rise of the over loaded condition.