R07DS0713EJ0200 Rev.2.00

Page 1 of 7

Nov 05, 2013

RJF0604DPD

60V, 5A Silicon N Channel Thermal FET

Power Switching

Description

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in

over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of

high junction temperature like applying over power consumption, over current etc..

Features

• Logic level operation (4 V Gate drive).

• Built-in the over temperature shut-down circuit.

• High endurance capability against to the short circuit.

• Latch type shut down operation (need 0 voltage recovery).

• Built-in the current limitation circuit.

• Power supply voltage applies 12 V and 24 V.

• For Industrial applications

Outline

RENESAS Package code: PRSS0004ZD-C

(Package name: DPAK (S) )

1

2

3

4

D

S

G

Gate Resistor

Temperature

Sensing

Circuit

Latch

Circuit

Gate

Shut-down

Circuit

Current

Limitation

Circuit

1. Gate

2. Drain

3. Source

4. Drain

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

60

V

Gate to source voltage

16

V

Gate to source voltage

–2.5

V

Drain current

Note3

5

A

Body-drain diode reverse drain current

5

A

Avalanche current

Note 2

4.7

A

Avalanche energy

Note 2

94.7

mJ

Channel dissipation

Pch

Note 1

30

W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. Value at Tc = 25

°C

2. Tch = 25

°C, Rg ≥ 50 Ω

3. It provides by the current limitation lower bound value.

R07DS0713EJ0200

Rev.2.00

Nov 05, 2013