RJF0604DPD_15 datasheet(4/8 Pages) RENESAS

Part #	RJF0604DPD

Description	60V, 5A Silicon N Channel Thermal FET

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Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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4 / 8 page

RJF0604DPD

Target Specifications

R07DS0713EJ0200 Rev.2.00

Page 4 of 7

Nov 05, 2013

120

100

–50 –25

0

25

75 100

50

150

125

0

20

40

60

80

Pulse Test

10 V

VGS = 4 V

ID = 2 A, 0.5 A, 1 A

100

10

1

0.1

1

10

Tc = –40°C

150°C

VDS = 10 V

Pulse Test

25°C

0.1

1

10

100

1000

10

100

1

di / dt = 50 A /

μs

VGS = 0, Ta = 25°C

010

20

30

40

60

50

10000

3000

1000

300

100

30

10

5

0

1

2

3

4

0.2

0.4

0.6

0.8

1.0

VGS = 5 V

100

10

1

0.1

0.2

0.5

1

2

5

0.1

Pulse Test

tf

tr

td(off)

td(on)

0 V

VGS = 10 V, VDD = 30 V

PW = 300

μs, duty ≤ 1 %

Coss

VGS = 0

f = 1 MHz

Case Temperature

Tc (°C)

Static Drain to Source on State Resistance

vs. Temperature

Forward Transfer Admittance vs.

Drain Current

Drain Current ID (A)

Reverse Drain Current

IDR (A)

Body-Drain Diode Reverse

Recovery Time

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

Source to Drain Voltage VSD (V)

Reverse Drain Current vs.

Source to Drain Voltage

Drain Current

ID (A)

Switching Characteristics

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RJF0604DPD Datasheet(PDF) 4 Page - Renesas Technology Corp

RJF0604DPD Datasheet(HTML) 4 Page - Renesas Technology Corp

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