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RJF0408JPD Datasheet(PDF) 5 Page - Renesas Technology Corp |
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RJF0408JPD Datasheet(HTML) 5 Page - Renesas Technology Corp |
5 / 8 page ![]() RJF0408JPD Target Specifications R07DS1133EJ0100 Rev.1.00 Page 5 of 7 Dec 12, 2013 Gate to Source Voltage VGS (V) Shutdown Case Temperature vs. Gate to Source Voltage Pulse Width PW (S) Normalized Transient Thermal Impedance vs. Pulse Width Gate to Source Voltage vs. Shutdown Time of Load-Short Test Shutdown Time of Load-Short Test Pw (ms) 16 14 12 8 10 4 2 6 0 0.01 10 0.1 1 VDD = 16 V 24 V 200 180 160 140 120 0 100 2468 10 ID = 0.5 A 3 1 0.3 0.1 0.03 0.01 10 μ 100 μ 1 m 10 m 100 m 1 10 DM P PW T D = PW T θch - c(t) = γs (t) θch - c θch - c = 3.125°C / W, Tc = 25°C Tc = 25°C D = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse |
Similar Part No. - RJF0408JPD_15 |
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Similar Description - RJF0408JPD_15 |
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