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RJF0408JPD Datasheet(PDF) 4 Page - Renesas Technology Corp |
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RJF0408JPD Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 8 page RJF0408JPD Target Specifications R07DS1133EJ0100 Rev.1.00 Page 4 of 7 Dec 12, 2013 Case Temperature Tc (°C) Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Drain Current ID (A) Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage Source to Drain Voltage VSD (V) Reverse Drain Current vs. Source to Drain Voltage Drain Current ID (A) Switching Characteristics 55 50 –50 –25 0 25 75 100 50 150 125 10 20 25 40 15 30 35 45 VGS = 5 V 10 V ID = 15 A 5 A 10 A ID = 15 A 5 A 10 A Pulse Test 100 10 1 0.1 0.1 1 100 10 25°C Tc = – 40°C 150°C VDS = 10 V Pulse Test 1 10 100 1000 10 100 1 diF / dt = 50 A / μs VGS = 0, Ta = 25°C 100 10 1 1 10 100 0.1 VGS = 10 V, VDD = 30 V PW = 300 μs, duty ≤ 1 % tf tr td(off) td(on) 20 25 30 0 0 5 10 15 0.2 0.4 0.6 0.8 1.0 VGS = 5 V 0 V Pulse Test 010 20 30 40 10000 3000 1000 300 100 30 10 Coss VGS = 0 f = 1 MHz |
Similar Part No. - RJF0408JPD_15 |
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Similar Description - RJF0408JPD_15 |
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