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RJF0408JPD Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # RJF0408JPD
Description  40V, 30A Silicon N Channel Thermal FET Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJF0408JPD Datasheet(HTML) 4 Page - Renesas Technology Corp

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RJF0408JPD
Target Specifications
R07DS1133EJ0100 Rev.1.00
Page 4 of 7
Dec 12, 2013
Case Temperature
Tc (°C)
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
Drain Current ID (A)
Reverse Drain Current
IDR (A)
Body-Drain Diode Reverse
Recovery Time
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
Source to Drain Voltage VSD (V)
Reverse Drain Current vs.
Source to Drain Voltage
Drain Current
ID (A)
Switching Characteristics
55
50
–50 –25
0
25
75 100
50
150
125
10
20
25
40
15
30
35
45
VGS = 5 V
10 V
ID = 15 A
5 A
10 A
ID = 15 A
5 A
10 A
Pulse Test
100
10
1
0.1
0.1
1
100
10
25°C
Tc = – 40°C
150°C
VDS = 10 V
Pulse Test
1
10
100
1000
10
100
1
diF / dt = 50 A /
μs
VGS = 0, Ta = 25°C
100
10
1
1
10
100
0.1
VGS = 10 V, VDD = 30 V
PW = 300
μs, duty ≤ 1 %
tf
tr
td(off)
td(on)
20
25
30
0
0
5
10
15
0.2
0.4
0.6
0.8
1.0
VGS = 5 V
0 V
Pulse Test
010
20
30
40
10000
3000
1000
300
100
30
10
Coss
VGS = 0
f = 1 MHz


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