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RJF0410JPE Datasheet(PDF) 2 Page - Renesas Technology Corp |
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RJF0410JPE Datasheet(HTML) 2 Page - Renesas Technology Corp |
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2 / 8 page  RJF0410JPE R07DS1237EJ0200 Rev.2.00 Page 2 of 7 Jan 29, 2015 Typical Operation Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Input voltage VIH 3.5 — — V VIL — — 1.2 V Input current (Gate non shut down) IIH1 — — 100 μA Vi = 8 V, VDS = 0 IIH2 — — 50 μA Vi = 3.5 V, VDS = 0 IIL — — 1 μA Vi = 1.2 V, VDS = 0 Input current (Gate shut down) IIH(sd)1 — 0.8 — mA Vi = 8 V, VDS = 0 IIH(sd)2 — 0.35 — mA Vi = 3.5 V, VDS = 0 Shut down temperature Tsd — 175 — °C Channel temperature Gate operation voltage Vop 3.5 — 12 V Drain current (Current limitation value) ID limt 40 — — A VGS = 5 V, VDS = 10 V Note 4 Notes: 4. Pulse test Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain current ID1 — — 60 A VGS = 3.5 V, VDS = 10 V Note 5 ID2 — — 10 mA VGS = 1.2 V, VDS = 10 V ID3 40 — — A VGS = 5 V, VDS = 10 V Note 5 Drain to source breakdown voltage V(BR)DSS 40 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS 16 — — V IG = 800 μA, VDS = 0 V(BR)GSS –2.5 — — V IG = –100 μA, VDS = 0 Gate to source leak current IGSS1 — — 100 μA VGS = 8 V, VDS = 0 IGSS2 — — 50 μA VGS = 3.5 V, VDS = 0 IGSS3 — — 1 μA VGS = 1.2 V, VDS = 0 IGSS4 — — –100 μA VGS = –2.4 V, VDS = 0 Input current (shut down) IGS(OP)1 — 0.8 — mA VGS = 8 V, VDS = 0 IGS(OP)2 — 0.35 — mA VGS = 3.5 V, VDS = 0 Zero gate voltage drain current IDSS — — 10 μA VDS = 32 V, VGS = 0, Tc = 110 °C Gate to source cutoff voltage VGS(off) 1.1 — 2.1 V VDS = 10 V, ID = 1 mA Forward transfer admittance |yfs| 20 46 — S ID = 20 A, VDS = 10 V Note 5 Static drain to source on state resistance RDS(on) — 11.3 15 m Ω ID = 20 A, VGS = 5 V Note 5 RDS(on) — 9 13 m Ω ID = 20 A, VGS = 10 V Note 5 Output capacitance Coss — 1098 — pF VDS = 10 V, VGS = 0, f = 1MHz Turn-on delay time td(on) — 24.7 — μs VGS = 10 V, ID= 20 A, RL = 1.5 Ω Rise time tr — 99.3 — μs Turn-off delay time td(off) — 7.44 — μs Fall time tf — 13.3 — μs Body-drain diode forward voltage VDF — 0.9 — V IF = 40 A, VGS = 0 Note 5 Body-drain diode reverse recovery time trr — 122 — ns IF = 40 A, VGS = 0 diF/dt = 50 A/ μs Over load shut down operation time Note 6 tos1 — 0.63 — ms VGS = 5 V, VDD = 16 V Notes: 5. Pulse test 6. Including the junction temperature rise of the over loaded condition. |
Similar Part No. - RJF0410JPE_15 |
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Similar Description - RJF0410JPE_15 |
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