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RJF0409JSP Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # RJF0409JSP
Description  40V, 5A Silicon N Channel Thermal FET Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJF0409JSP Datasheet(HTML) 3 Page - Renesas Technology Corp

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RJF0409JSP
Preliminary
R07DS1228EJ0200 Rev.2.00
Page 3 of 7
Dec 02, 2014
Main Characteristics
10
ms
4.0
3.0
2.0
1.0
0
0
50
100
150
200
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Drain Source Saturation Voltage vs.
Gate to Source Voltage
Typical Output Characteristics
Drain Current ID (A)
Static Drain to Source On State Resistance
vs. Drain Current
Gate to Source Voltage VGS (V)
Gate to Source Voltage VGS (V)
Ambient Temperature Ta (°C)
Power vs. Temperature Derating
1 Driver
Operation
2 Driver
Operation
Note :When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm)
Test condition.
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm), (PW ≤ 10s)
10
1
110
100
100
0.01
0.01
0.1
10
ms
0.1
PW
=
1
ms
Operation
in this area
is limited R
DS(on)
Ta = 25
°C
1 shot Pulse
1 Driver Operation
Thermal shut down
operation area
0
0
12
3
5
4
1
2
3
5
4
TC = −40°C
25
°C
150
°C
VDS = 10 V
Pulse Test
1000
200
400
0
02
4
6
8
10
ID = 1 A
2.5 A
5 A
600
800
Pulse Test
0.1
1
10
10
1000
100
VGS = 5 V
10 V
Pulse Test
20
10
15
5
08
24
6
10
VGS = 3.5 V
4 V
6 V
8 V
10 V
5 V
Pulse Test


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