RJF0409JSP

Preliminary

R07DS1228EJ0200 Rev.2.00

Page 2 of 7

Dec 02, 2014

Typical Operation Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Input voltage

3.5

—

—

V

—

—

1.2

V

Input current

(Gate non shut down)

—

—

100

μA

—

—

50

μA

—

—

1

μA

Input current

(Gate shut down)

—

0.8

—

mA

—

0.35

—

mA

Shut down temperature

Tsd

—

175

—

°C

Channel temperature

Gate operation voltage

Vop

3.5

—

12

V

Drain current

(Current limitation value)

5

—

—

A

Note 5

Notes: 5. Pulse test

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain current

—

—

14

A

Note 6

—

—

10

mA

5

—

—

A

Note 6

Drain to source breakdown

voltage

40

—

—

V

Gate to source breakdown

voltage

16

—

—

V

–2.5

—

—

V

Gate to source leak current

—

—

100

μA

—

—

50

μA

—

—

1

μA

—

—

–100

μA

Input current (shut down)

—

0.8

—

mA

—

0.35

—

mA

Zero gate voltage drain current

—

—

10

μA

Ta = 125

°C

Gate to source cutoff voltage

1.4

—

2.2

V

Forward transfer admittance

4

7

—

S

Static drain to source on state

resistance

—

81

100

m

Ω

Note 6

—

70

86

m

Ω

Note 6

Output capacitance

Coss

—

245

—

pF

Turn-on delay time

—

1.65

—

μs

Rise time

—

4.50

—

μs

Ω

Turn-off delay time

—

2.35

—

μs

Fall time

—

3.0

—

μs

Body-drain diode forward voltage

—

0.89

—

V

Note 6

Body-drain diode reverse

recovery time

—

106

—

ns

μs

Over load shut down

operation time

Note 7

—

0.37

—

ms

Notes: 6. Pulse test

7. Including the junction temperature rise of the over loaded condition.