RJF0409JSP_15 datasheet(4/8 Pages) RENESAS

Part #	RJF0409JSP

Description	40V, 5A Silicon N Channel Thermal FET Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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4 / 8 page

RJF0409JSP

Preliminary

R07DS1228EJ0200 Rev.2.00

Page 4 of 7

Dec 02, 2014

Source to Drain Voltage VSD (V)

Reverse Drain Current vs.

Source to Drain Voltage

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

Reverse Drain Current IDR (A)

Body-Drain Diode Reverse

Recovery Time

Drain Current ID (A)

Switching Characteristics

Case Temperature Tc (

°C)

Static Drain to Source On State Resistance

vs. Temperature

Gate to Source Voltage vs.

Shutdown Time of Load-Short Test

Shutdown Time of Load-Short Test Pw (ms)

200

150

−50

−25 0

25

50

75 100 125 150

0

50

100

VGS = 5 V

ID = 1 A, 2.5 A

ID = 1 A, 2.5 A, 5 A

10 V

5 A

Pulse Test

0.1

1

10

100

1000

10

di / dt = 50 A /

μs

VGS = 0

0.1

1

10

1

0.1

10

VGS = 10 V, VDD = 30 V

PW = 300

μs, duty ≤ 1 %

tf

td(off)

td(on)

tr

010

20

40

30

10000

1000

100

10

VGS = 0

f = 1 MHz

Coss

0

0.2

0.6

0.8

1.0

0.4

1.2

4

5

3

2

1

VGS = 0 V

5 V

Pulse Test

2

4

16

12

14

10

8

6

0

10

0.1

1

VDD = 16 V

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