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RJF0409JSP Datasheet(PDF) 4 Page - Renesas Technology Corp |
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RJF0409JSP Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 8 page RJF0409JSP Preliminary R07DS1228EJ0200 Rev.2.00 Page 4 of 7 Dec 02, 2014 Source to Drain Voltage VSD (V) Reverse Drain Current vs. Source to Drain Voltage Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time Drain Current ID (A) Switching Characteristics Case Temperature Tc ( °C) Static Drain to Source On State Resistance vs. Temperature Gate to Source Voltage vs. Shutdown Time of Load-Short Test Shutdown Time of Load-Short Test Pw (ms) 200 150 −50 −25 0 25 50 75 100 125 150 0 50 100 VGS = 5 V ID = 1 A, 2.5 A ID = 1 A, 2.5 A, 5 A 10 V 5 A Pulse Test 0.1 1 10 100 1000 10 di / dt = 50 A / μs VGS = 0 0.1 1 10 1 0.1 10 VGS = 10 V, VDD = 30 V PW = 300 μs, duty ≤ 1 % tf td(off) td(on) tr 010 20 40 30 10000 1000 100 10 VGS = 0 f = 1 MHz Coss 0 0.2 0.6 0.8 1.0 0.4 1.2 4 5 3 2 1 VGS = 0 V 5 V Pulse Test 2 4 16 12 14 10 8 6 0 10 0.1 1 VDD = 16 V |
Similar Part No. - RJF0409JSP_15 |
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Similar Description - RJF0409JSP_15 |
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