IRFD9120 datasheet(2/6 Pages) INTERSIL

Part #	IRFD9120

Description	1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET

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Manufacturer	INTERSIL [Intersil Corporation]

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4-46

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Speciﬁed

IRFD9120

UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS

-100

V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR

-100

V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

-1.0

A

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

-8.0

A

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±20

V

Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

1.0

W

Linear Derating Factor (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.008

W/oC

Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

370

mJ

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 150

oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg

300

260

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 125oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = -250µA, VGS = 0V, (Figure 9)

-100

-

V

Gate to Threshold Voltage

VGS(TH)

VGS = VDS, ID = -250µA

-2

-

-4

V

Zero Gate Voltage Drain Current

IDSS

VDS = Rated BVDSS, VGS = 0V

-

-25

µA

VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125

oC

-

-250

µA

On-State Drain Current (Note 2)

ID(ON)

VDS > ID(ON) x rDS(ON) MAX, VGS = -10V

-1.0

-

A

Gate to Source Leakage Current

IGSS

VGS = ±20V

-

±500

nA

Drain to Source On Resistance (Note 2)

rDS(ON)

ID = -0.8A, VGS = -10V, (Figures 7, 8)

-

0.5

0.6

Ω

Forward Transconductance (Note 2)

gfs

VDS < 50V, ID = -0.8A (Figure 11)

0.8

1.2

-

S

Turn-On Delay Time

td(ON)

VDD = 0.5 x Rated BVDSS, ID = -1.0A,

RG = 9.1Ω, VGS = -10V, (Figures 16, 17)

RL = 50Ω for VDD = -50V

MOSFET Switching Times are Essentially Indepen-

dent of Operating Temperature

-25

50

ns

Rise Time

tr

-

50

100

ns

Turn-Off Delay Time

td(OFF)

-

50

100

ns

Fall Time

tf

-

50

100

ns

Total Gate Charge

(Gate to Source + Gate to Drain)

Qg(TOT)

VGS = -10V, ID = -1.0A, VDS = 0.8 x Rated BVDSS

(Figures 13, 18, 19)

Gate Charge is Essentially Independent of Operating

Temperature

-16

20

nC

Gate to Source Charge

Qgs

-9

-

nC

Gate to Drain “Miller” Charge

Qgd

-7

-

nC

Input Capacitance

CISS

VDS = -25V, VGS = 0V, f = 1MHz, (Figure 10)

-

300

-

pF

Output Capacitance

COSS

-

200

-

pF

Reverse Transfer Capacitance

CRSS

-50

-

pF

Internal Drain Inductance

LD

Measured From the Drain

Lead, 2.0mm (0.08in) From

Header to Center of Die

Modified MOSFET

Symbol Showing the In-

ternal Devices

Inductances

-

4.0

-

nH

Internal Source Inductance

LS

Measured From the Source

Lead, 2.0mm (0.08in) From

Header to Source Bonding

Pad

-

6.0

-

nH

Thermal Resistance Junction to Ambient

RθJA

Typical Socket Mount

-

120

oC/W

LS

LD

G

D

S

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