IRFD9120 datasheet(4/6 Pages) INTERSIL

Part #	IRFD9120

Description	1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET

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Manufacturer	INTERSIL [Intersil Corporation]

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FIGURE 5. SATURATION CHARACTERISTICS

FIGURE 6. TRANSFER CHARACTERISTICS

NOTE: Heating effect of 2

µs pulse is minimal.

FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

FIGURE 8. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

0

-1

0

-1

-2

-3

-5

-2

-3

VDS, DRAIN TO SOURCE VOLTAGE (V)

-4

-5

VGS = -7V

VGS = -10V

VGS = -9V

VGS = -4V

VGS = -5V

VGS = -6V

VGS = -8V

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX.

-5

-4

-3

-2

-1

0

-2

-3

-4

-5

-6

-7

VGS, GATE TO SOURCE VOLTAGE (V)

VDS ≥ I D(ON) x rDS(ON) MAX.

TJ = 125

oC

TJ = 25

oC

TJ = -55

oC

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX.

ID, DRAIN CURRENT (A)

1.6

1.2

0.8

0.4

0

0-2

-4

-6

-8

VGS = -20V

VGS = -10V

2.2

1.4

1.0

0.6

0.2

-40

0

40

TJ, JUNCTION TEMPERATURE (

oC)

120

1.8

80

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX.

VGS = -10V, ID = -8A

1.25

0.95

0.85

0.75

-40

0

40

TJ, JUNCTION TEMPERATURE (

oC)

80

120

1.05

1.15

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX.

500

100

0

-20

-50

300

VDS, DRAIN TO SOURCE VOLTAGE (V)

400

200

CISS

COSS

CRSS

-10

-30

-40

CISS = CGS + CGD

CRSS = CGD

COSS ≈ CDS + CGD

VGS = 0V, f = 1MHz

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