4

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Die Characteristics

DIE DIMENSIONS:

4760

µm x 5660µm (188 mils x 223 mils)

Thickness: 483

µm ±25.4µm (19 mils ±1 mil)

INTERFACE MATERIALS:

Glassivation:

Type: Phosphorus Silicon Glass

Thickness: 8.0k

Å

Top Metallization:

Type: AlSiCu

Thickness: 16.0k

Å

Substrate:

Radiation Hardened Silicon Gate,

Dielectric Isolation

Backside Finish:

Silicon

ASSEMBLY RELATED INFORMATION:

Substrate Potential:

Unbiased (DI)

ADDITIONAL INFORMATION:

Worst Case Current Density:

Transistor Count:

432

Metallization Mask Layout

HS-4080ARH

15

14

13

12

11

10

9

8

7

6

16

17

18

19

20

1

2

3

4

5

HS-4080ARH