BC337 datasheet(4/19 Pages) PHILIPS

Part #	BC337

Description	45 V, 500 mA NPN general-purpose transistors

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Manufacturer	PHILIPS [NXP Semiconductors]

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4 / 19 page

BC817_BC817W_BC337_6

Product data sheet

Rev. 06 — 17 November 2009

4 of 19

NXP Semiconductors

BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

5.

Limiting values

[1]

Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.

[2]

Valid for all available selection groups.

6.

Thermal characteristics

[1]

Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.

[2]

Valid for all available selection groups.

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VCBO

collector-base voltage

open emitter

-

50

V

VCEO

collector-emitter voltage

open base;

IC =10mA

-45

V

VEBO

emitter-base voltage

open collector

-

5

V

IC

collector current (DC)

-

500

mA

ICM

peak collector current

-

1

A

IBM

peak base current

-

200

mA

Ptot

total power dissipation

BC817

Tamb ≤ 25 °C

[1][2] -250

mW

BC817W

Tamb ≤ 25 °C

[1][2] -200

mW

BC337

Tamb ≤ 25 °C

[1][2] -625

mW

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

−65

+150

°C

Table 7.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

BC817

Tamb ≤ 25 °C

[1][2] -

-

500

K/W

BC817W

Tamb ≤ 25 °C

[1][2] -

-

625

K/W

BC337

Tamb ≤ 25 °C

[1][2] -

-

200

K/W

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