AB28F200BX-T90 datasheet(23/33 Pages) INTEL

Part #	AB28F200BX-T90

Description	2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY

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Manufacturer	INTEL [Intel Corporation]

Direct Link	http://www.intel.com

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23 / 33 page

A28F200BX-TB

DC CHARACTERISTICS (Continued)

Symbol

Parameter

Notes Min Typ

Max

Unit

Test Condition

ICCD

VCC Deep Power-Down Current

1

80

m

ARP

e

GND g02V

ICCR

VCC Read Current for

1 5

60

mA VCC e VCC Max CE

e

GND

A28F200BX Byte-Wide and

6

f e 10 MHz IOUT e 0mA

Word-Wide Mode

CMOS Inputs

65

mA VCC e VCC Max CE

e

VIL

f e 10 MHz IOUT e 0mA

TTL Inputs

ICCW

VCC Write Current

1 4

65

mA Word Write in Progress

ICCE

VCC Block Erase Current

1 4

30

mA Block Erase in Progress

ICCES

VCC Erase Suspend Current

1 2

5

10

mA Block Erase Suspended

CE

e

VIH

IPPS

VPP Standby Current

1

15

m

AVPP s VCC

IPPD

VPP Deep Power-Down Current

1

50

m

ARP

e

GND g02V

IPPR

VPP Read Current

1

200

m

AVPP l VCC

IPPW

VPP Word Write Current

1 4

40

mA VPP e VPPH

Word Write in Progress

IPPW

VPP Byte Write Current

1 4

30

mA VPP e VPPH

Byte Write in Progress

IPPE

VPP Block Erase Current

1 4

30

mA VPP e VPPH

Block Erase in Progress

IPPES

VPP Erase Suspend Current

1

200

m

AVPP e VPPH

Block Erase Suspended

IRP

RP

Current

1 4

500

m

ARP

e

VHH

IID

A9 Intelligent Identifier Current

1 4

500

m

AA9 e VID

VID

A9 Intelligent Identifier Voltage

115

130

V

VIL

Input Low Voltage

b

05

08

V

VIH

Input High Voltage

20

VCC a 05 V

VOL

Output Low Voltage

045

V VCC e VCC Min

IOL e 58 mA

VOH

Output High Voltage

24

V VCC e VCC Min

IOH eb25 mA

VPPL

VPP during Normal Operations

3

00

65

V

VPPH

VPP during EraseWrite Operations

7

114 120

126

V

VLKO

VCC EraseWrite Lock Voltage

20

V

VHH

RP

Unlock Voltage

115

130

V Boot Block WriteErase

23

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AB28F200BX-T90 Datasheet(PDF) 23 Page - Intel Corporation

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