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AB28F200BX-T90 Datasheet(PDF) 11 Page - Intel Corporation

Part # AB28F200BX-T90
Description  2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
Download  33 Pages
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Manufacturer  INTEL [Intel Corporation]
Direct Link  http://www.intel.com
Logo INTEL - Intel Corporation

AB28F200BX-T90 Datasheet(HTML) 11 Page - Intel Corporation

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A28F200BX-TB
Table 1 Bus Operations for WORD-WIDE Mode (BYTE
e
VIH)
Mode
Notes
RP
CE
OE
WE
A9
A0
VPP
DQ0–15
Read
1 2 3
VIH
VIL
VIL
VIH
XX
X
DOUT
Output Disable
VIH
VIL
VIH
VIH
X
X
X
High Z
Standby
VIH
VIH
X
X
X
X
X
High Z
Deep Power-Down
9
VIL
X
X
X
X
X
X
High Z
Intelligent Identifier (Mfr)
4
VIH
VIL
VIL
VIH
VID
VIL
X
0089H
Intelligent Identifier (Device)
4 5
VIH
VIL
VIL
VIH
VID
VIH
X
2274H
2275H
Write
6 7 8
VIH
VIL
VIH
VIL
XX
X
DIN
Table 2 Bus Operations for BYTE-WIDE Mode (BYTE
e
VIL)
Mode
Notes
RP
CE
OE
WE
A9
A0
Ab1 VPP DQ0–7 DQ8–14
Read
1 2 3
VIH
VIL
VIL
VIH
XX
X
X
DOUT
High Z
Output Disable
VIH
VIL
VIH
VIH
X
X
X
X
High Z
High Z
Standby
VIH
VIH
X
X
X
X
X
X
High Z
High Z
Deep Power-Down
9
VIL
X
X
X
X
X
X
X
High Z
High Z
Intelligent Identifier (Mfr)
4
VIH
VIL
VIL
VIH
VID
VIL
X
X
89H
High Z
Intelligent Identifier
4 5
VIH
VIL
VIL
VIH
VID VIH
X
X
74H
High Z
(Device)
75H
Write
6 7 8
VIH
VIL
VIH
VIL
XX
X
X
DIN
High Z
NOTES
1 Refer to DC Characteristics
2 X can be VIL or VIH for control pins and addresses VPPL or VPPH for VPP
3 See DC characteristics for VPPL VPPH VHH VID voltages
4 Manufacturer and Device codes may also be accessed via a CUI write sequence A1–A17 e X
5 Device ID e 2274H for A28F200BX-T and 2275H for A28F200BX-B
6 Refer to Table 3 for valid DIN during a write operation
7 Command writes for Block Erase or WordByte Write are only executed when VPP e VPPH
8 To write or erase the boot block hold RP
at VHH
9 RP
must be at GND g02V to meet the 80 mA maximum deep power-down current
32 Read Operations
The 2-Mbit boot block flash family has three user
read modes Array Intelligent Identifier and Status
Register Status Register read mode will be dis-
cussed in detail in the ‘‘Write Operations’’ section
During power-up conditions (VCC supply ramping) it
takes a maximum of 300 ns from when VCC is at
45V minimum to valid data on the outputs
321 READ ARRAY
If the memory is not in the Read Array mode it is
necessary to write the appropriate read mode com-
mand to the CUI The 2-Mbit boot block flash family
has three control functions all of which must be logi-
cally active to obtain data at the outputs Chip-En-
able CE
is the device selection control Reset
Power-Down RP
is the device power control Out-
put-Enable OE
is the DATA INPUTOUTPUT
(DQ 015 or DQ 07 ) direction control and when
active is used to drive data from the selected memo-
ry on to the IO bus
11


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