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FDD16AN08_F085 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDD16AN08_F085 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 11 page  Package Marking and Ordering Information Electrical Characteristics T C = 25°C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics (V GS = 10V) Drain-Source Diode Characteristics Notes: 1: Starting TJ = 25°C, L = 155µH, IAS = 35A. Device Marking Device Package Reel Size Tape Width Quantity FDD16AN08A0 FDD16AN08A0_F085 TO-252AA 330mm 16mm 2500 units Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 75 - - V IDSS Zero Gate Voltage Drain Current VDS = 60V - - 1 µA VGS = 0V TC = 150 oC- - 250 IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2 - 4 V rDS(ON) Drain to Source On Resistance ID = 50A, VGS = 10V - 0.013 0.016 Ω ID = 25A, VGS = 6V - 0.019 0.029 ID = 50A, VGS = 10V, TJ = 175 oC - 0.032 0.037 CISS Input Capacitance VDS = 25V, VGS = 0V, f = 1MHz - 1874 - pF COSS Output Capacitance - 290 - pF CRSS Reverse Transfer Capacitance - 91 - pF Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V VDD = 40V ID = 50A Ig = 1.0mA 31 47 nC Qg(TH) Threshold Gate Charge VGS = 0V to 2V - 4 6 nC Qgs Gate to Source Gate Charge - 9.7 - nC Qgs2 Gate Charge Threshold to Plateau - 5.7 - nC Qgd Gate to Drain “Miller” Charge - 7.2 - nC tON Turn-On Time VDD = 40V, ID = 50A VGS = 10V, RGS = 10Ω - - 93 ns td(ON) Turn-On Delay Time - 8 - ns tr Rise Time - 54 - ns td(OFF) Turn-Off Delay Time - 32 - ns tf Fall Time - 22 - ns tOFF Turn-Off Time - - 81 ns VSD Source to Drain Diode Voltage ISD = 50A - - 1.25 V ISD = 25A - - 1.0 V trr Reverse Recovery Time ISD = 50A, dISD/dt = 100A/µs- - 34 ns QRR Reverse Recovered Charge ISD = 50A, dISD/dt = 100A/µs- - 31 nC FD D16AN08A0_F085 Rev. A1 www.fairchildsemi.com 2 |
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