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FDD16AN08_F085 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDD16AN08_F085 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 11 page FDD16AN08A0_F085 N-Channel UltraFET® Trench MOSFET 75V, 50A, 16m Ω Features •rDS(ON) = 13mΩ (Typ.), VGS = 10V, ID = 50A •Qg(tot) = 31nC (Typ.), VGS = 10V • Low Miller Charge • Low Qrr Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82660 Applications • 42V Automotive Load Control • Starter / Alternator Systems • Electronic Power Steering Systems • Electronic Valve Train Systems • DC-DC converters and Off-line UPS • Distributed Power Architectures and VRMs • Primary Switch for 24V and 48V systems MOSFET Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. Symbol Parameter Ratings Units VDSS Drain to Source Voltage 75 V VGS Gate to Source Voltage ±20 V ID Drain Current 50 A Continuous (TC < 79 oC, V GS = 10V) Continuous (Tamb = 25 oC, V GS = 10V, with R θJA = 52 oC/W) 9 A Pulsed Figure 4 A EAS Single Pulse Avalanche Energy (Note 1) 95 mJ PD Power dissipation 135 W Derate above 25 oC0.9 W/ oC TJ, TSTG Operating and Storage Temperature -55 to 175 oC RθJC Thermal Resistance Junction to Case TO-252 1.11 oC/W RθJA Thermal Resistance Junction to Ambient TO-252 100 oC/W RθJA Thermal Resistance Junction to Ambient TO-252, 1in 2 copper pad area 52 oC/W D G S GATE SOURCE DRAIN (FLANGE) TO-252AA FDD SERIES October 2008 RoHS Compliant • ©2008 Fairchild Semiconductor Corporation FD D16AN08A0_F085 Rev. A1 www.fairchildsemi.com 1 |
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